The stage identification of AgGaGeS4·nGeS2 (n=0–4) crystals grown by vertical Bridgman–Stockbarger approach was completed to find the boundary value n in between a homogeneous solid Answer and its mixture with GeS2. To obtain trustworthy benefits, the traditional ways of X-ray diffraction (XRD) and Power dispersive X-ray spectroscopy (EDX) wer